Title :
Test structures for the evaluation of air-bridge interconnection in GaAs IC´s fabrication process
Author :
Nakanishi, M. ; Noda, M. ; Nakano, H. ; Sonoda, T. ; Otsubo, M.
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Specially designed test structures have been developed for the first time in order to evaluate the deflection of the air-bridge which is an indispensable structure for improving the device performance by reducing stray capacitances. It is found that the origin of the deflection strongly depends on the layout of the interconnection pattern under the air-bridge and air-bridge dimensions. By using, newly developed test structures, we can easily optimize the air-bridge design and process parameters to obtain high performance GaAs IC devices and to shrink the chip size while maintaining high reliability
Keywords :
III-V semiconductors; gallium arsenide; integrated circuit interconnections; integrated circuit layout; integrated circuit technology; integrated circuit testing; GaAs; GaAs IC fabrication process; air-bridge deflection; air-bridge interconnection evaluation; high reliability; interconnection pattern layout; process parameters optimisation; stray capacitance reduction; test structures; Air gaps; Capacitance; Circuit testing; Frequency; Gallium arsenide; Integrated circuit interconnections; Integrated circuit testing; Microwave devices; Optical device fabrication; Resists;
Conference_Titel :
Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-3243-1
DOI :
10.1109/ICMTS.1997.589408
