DocumentCode :
1722189
Title :
Bond strength tests between silicon wafers and Duran tubes (fusion bonded fluidic interconnects)
Author :
Fazal, Lmran ; Berenschot, Erwin ; DeBoer, Rik ; Jansen, Henri ; Elwenspoek, Miko
Author_Institution :
MESA+ Res. Inst., Twente Univ., Enschede, Netherlands
Volume :
1
fYear :
2005
Firstpage :
936
Abstract :
The fusion bond strength of glass tubes with standard silicon wafers is presented. Experiments with plain silicon wafers and those coated with silicon oxide and silicon nitride are presented. Results obtained are discussed in terms of homogeneity and strength of fusion bond. High pressure testing shows that the bond strength is large enough for most applications of fluidic interconnects. The bond strength for 525 μm thick silicon with glass tubes having outer diameter of 6 mm and with wall thickness 2 mm, is more than 60 bars after annealing at a temperature of 800°C.
Keywords :
annealing; bonding processes; elemental semiconductors; fluidic devices; glass; microfluidics; silicon; silicon compounds; 2 mm; 525 micron; 6 mm; 60 bar; 800 degC; MEMS; Si-SiN; Si-SiO2; annealing; coated wafers; fluidic interconnects; fusion bond homogeneity; fusion bonded fluidic interconnects; glass tubes; high pressure testing; silicon wafer/Duran tube bond strength; Annealing; Contamination; Glass; Micromechanical devices; Silicon; Temperature; Testing; Thermal expansion; Thermal stresses; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
Type :
conf
DOI :
10.1109/SENSOR.2005.1496572
Filename :
1496572
Link To Document :
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