DocumentCode
1722276
Title
TID testing of ferroelectric nonvolatile RAM
Author
Nguyen, D.N. ; Scheick, L.Z.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
57
Lastpage
61
Abstract
The test results of measurements performed on two different sizes of ferroelectric RAM (FeRAM) suggest the degradation is due to the low radiation tolerance of sense amplifiers and reference voltage generators which are based on commercial CMOS technology. This paper presents TID testing of 64Kb Ramtron FM 1608 and 256Kb Ramtron FM 1808
Keywords
ferroelectric storage; radiation effects; random-access storage; semiconductor device testing; 256 Kbyte; 256Kb Ramtron FM 1808; 64 Kbyte; 64Kb Ramtron FM 1608; FeRAM degradation; TID testing; commercial CMOS technology; ferroelectric nonvolatile RAM; radiation tolerance; reference voltage generator; sense amplifier; CMOS technology; Degradation; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Performance evaluation; Random access memory; Size measurement; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2001 IEEE
Conference_Location
Vancouver, BC
Print_ISBN
0-7803-7199-2
Type
conf
DOI
10.1109/REDW.2001.960449
Filename
960449
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