Title :
TID testing of ferroelectric nonvolatile RAM
Author :
Nguyen, D.N. ; Scheick, L.Z.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
The test results of measurements performed on two different sizes of ferroelectric RAM (FeRAM) suggest the degradation is due to the low radiation tolerance of sense amplifiers and reference voltage generators which are based on commercial CMOS technology. This paper presents TID testing of 64Kb Ramtron FM 1608 and 256Kb Ramtron FM 1808
Keywords :
ferroelectric storage; radiation effects; random-access storage; semiconductor device testing; 256 Kbyte; 256Kb Ramtron FM 1808; 64 Kbyte; 64Kb Ramtron FM 1608; FeRAM degradation; TID testing; commercial CMOS technology; ferroelectric nonvolatile RAM; radiation tolerance; reference voltage generator; sense amplifier; CMOS technology; Degradation; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Performance evaluation; Random access memory; Size measurement; Testing; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 2001 IEEE
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-7199-2
DOI :
10.1109/REDW.2001.960449
