DocumentCode :
1722354
Title :
Wide bandgap nitride components for silicon-based integrated ultraviolet photodetection
Author :
Stevens, K.S. ; Kinniburgh, M. ; Ohtani, A. ; Hovinen, M. ; Beresford, R.
Author_Institution :
Brown University
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
135
Lastpage :
136
Keywords :
Absorption; Buffer layers; Gallium nitride; Insulation; MISFETs; Molecular beam epitaxial growth; Photoconductivity; Photodetectors; Photonic band gap; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
Type :
conf
DOI :
10.1109/DRC.1994.1009445
Filename :
1009445
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1722354
