Title :
Compact gate-all-around silicon light modulator for ultra high speed operation
Author :
Moselund, K.E. ; Dainesi, P. ; Declercq, M. ; Bopp, M. ; Coronel, P. ; Skotnicki, T. ; Ionescu, A.M.
Author_Institution :
Electron. Lab., Ecole Polytechnique Federale de Lausanne, Switzerland
Abstract :
We propose a novel, compact and ultra-high speed optical modulator, the performance of which is validated by 2D and 3D simulations. The light phase modulation is achieved by a gate-all-around (GAA) capacitive structure. The good overlap between the optical mode and the modulated region provides an efficient and fast modulation. A compact and fully integrated intensity modulator can be obtained by placing the GAA modulator in a resonant structure. We analyze the effects of sub-micron scaling on both optical and electrical performance. Maximum frequencies of operation beyond 10 GHz are predicted for a cross section 340×340 nm2 and μm modulator lengths.
Keywords :
electro-optical modulation; integrated optoelectronics; intensity modulation; nanowires; optical resonators; phase modulation; silicon; 340 nm; Si; gate-all-around capacitive structure; gate-all-around silicon light modulator; integrated intensity modulator; light phase modulation; optical mode; resonant structure; silicon nanowire; silicon photonic devices; sub-micron scaling; ultra-high speed optical modulator; High speed optical techniques; Optical interconnections; Optical modulation; Optical propagation; Optical refraction; Optical variables control; Phase modulation; Refractive index; Resonance; Silicon;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
DOI :
10.1109/SENSOR.2005.1496618
