DocumentCode :
1722503
Title :
High temperature device characterstics of GaAs MESFETs fabricated with an AlAs buffer layer
Author :
Trombley, G.J. ; Havasy, C.K. ; Lee, R.H.Y. ; Reston, R.R. ; Ito, C.R. ; Jenkins, T.J.
Author_Institution :
Wright Laboratories
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
147
Lastpage :
148
Keywords :
Buffer layers; Gallium arsenide; MESFETs; Performance evaluation; Radio frequency; Subthreshold current; Temperature control; Temperature distribution; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
Type :
conf
DOI :
10.1109/DRC.1994.1009450
Filename :
1009450
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1722503
