DocumentCode
1722503
Title
High temperature device characterstics of GaAs MESFETs fabricated with an AlAs buffer layer
Author
Trombley, G.J. ; Havasy, C.K. ; Lee, R.H.Y. ; Reston, R.R. ; Ito, C.R. ; Jenkins, T.J.
Author_Institution
Wright Laboratories
fYear
1994
fDate
6/16/1905 12:00:00 AM
Firstpage
147
Lastpage
148
Keywords
Buffer layers; Gallium arsenide; MESFETs; Performance evaluation; Radio frequency; Subthreshold current; Temperature control; Temperature distribution; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1994. 52nd Annual
Type
conf
DOI
10.1109/DRC.1994.1009450
Filename
1009450
Link To Document