Deep submicron AlGaN/GaN heterostructure field effect transistors for nficrowave and high temperature applications

Author

Khan, M.A. ; Kuznia, J.N. ; Olson, DT ; Schaff, W.J. ; Burm, J.W. ; Shur

Author_Institution

APA Optics

fYear

1994

fDate

6/16/1905 12:00:00 AM

Firstpage

149

Lastpage

150

Keywords

Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; MODFETs; Millimeter wave transistors; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1994. 52nd Annual

Type

DOI

10.1109/DRC.1994.1009451

Filename

1009451

Link To Document