Title :
Proton radiation damage of Si APD single photon counters
Author :
Sun, Xiaoli ; Dautet, Henri
Author_Institution :
Laser Remote Sensing Branch, NASA Goddard Space Flight Center, Greenbelt, MD, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
Proton radiation damage of Si avalanche photodiodes were measured at 53 to 189MeV proton energy. The annealing rates were monitored at -10°C, room temperature, and 55°C. The results are compared with the previously published data
Keywords :
annealing; avalanche photodiodes; elemental semiconductors; photon counting; proton effects; silicon; -10 C; 20 C; 53 to 189 MeV; 55 C; Si; Si avalanche photodiode; annealing; proton radiation damage; single photon counter; Annealing; Earth; Extraterrestrial measurements; Instruments; Monitoring; Protons; Radiation detectors; Sun; Temperature; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 2001 IEEE
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-7199-2
DOI :
10.1109/REDW.2001.960462
