Title :
0.2μm gatelength, non-alloyed AlInAs/GaInAs JHEMTs with extrinsic ft=62 GHz
Author :
Shealy, James B. ; Thompson, M.A. ; DenBaars, Steven P.
Author_Institution :
University of California
fDate :
6/16/1905 12:00:00 AM
Keywords :
Breakdown voltage; Electric breakdown; Etching; Fabrication; Frequency; HEMTs; MOCVD; Ohmic contacts; Plasma applications; Transconductance;
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
DOI :
10.1109/DRC.1994.1009453
