Title :
High performance w-band pseudomorphic InAlAs/InGaAs/InP power HEMTs
Author :
Wang, S.C. ; Kao, M.Y. ; Liu, S.M.J. ; Ho, P. ; Duh, K.G.
Author_Institution :
Martin Marietta Laboratories
fDate :
6/16/1905 12:00:00 AM
Keywords :
Chemicals; Fabrication; Fingers; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Radio frequency;
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
DOI :
10.1109/DRC.1994.1009455
