DocumentCode
1722643
Title
Responses of radiation-hardened power MOSFETs to neutrons
Author
Gillberg, James E. ; Burton, Donald I. ; Titus, Jeffrey L. ; Wheatley, C. Frank ; Hubbard, Noel
Author_Institution
Fairchild Semicond., Somerville, NJ, USA
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
160
Lastpage
166
Abstract
The test results of recent neutron irradiations performed on a variety of radiation-hardened power MOSFETs manufactured by Fairchild Semiconductor are reported here. Twelve device types from four different families with rated drain breakdown voltages from 30 to 500 volts of which most are n-channels and the others are p-channels, were characterized
Keywords
neutron effects; power MOSFET; radiation hardening (electronics); semiconductor device breakdown; semiconductor device testing; 30 to 500 V; Fairchild Semiconductor; device testing; drain breakdown voltage; n-channel MOSFET; neutron irradiation; p-channel MOSFET; radiation-hardened power MOSFETs; Cranes; Life testing; MOSFETs; Manufacturing; Neutrons; Performance evaluation; Road transportation; Semiconductor device testing; Senior members; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2001 IEEE
Conference_Location
Vancouver, BC
Print_ISBN
0-7803-7199-2
Type
conf
DOI
10.1109/REDW.2001.960465
Filename
960465
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