DocumentCode :
1722674
Title :
In
0.29
Al
0.71
As/In
0.3
Ga
0.7
As heterostructure devices grown on GaAs substrates with a metamorphic buffer design
Author :
Chan, Y.-J. ; Chyi, J.-I. ; Wu, C.S. ; Hwang, H.P. ; Yang, M.T. ; Lin, R.M. ; Shieh, J.L.
Author_Institution :
National Central University
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
159
Lastpage :
160
Keywords :
Councils; Gallium arsenide; HEMTs; Voltage; mHEMTs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
Type :
conf
DOI :
10.1109/DRC.1994.1009456
Filename :
1009456
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1722674
