DocumentCode :
1722747
Title :
Very low resistance non-alloyed ohmic contacts using as-rich GaAs
Author :
Patkar, M.P. ; Chin, T.P. ; Woodall, J.M. ; Lundstrom, M.S. ; Melloch, M.R.
Author_Institution :
Purdue University
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
182
Lastpage :
184
Keywords :
Annealing; Contact resistance; Doping; Gallium arsenide; Molecular beam epitaxial growth; Ohmic contacts; Protection; Space charge; Temperature; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
Type :
conf
DOI :
10.1109/DRC.1994.1009459
Filename :
1009459
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1722747
