DocumentCode :
1722810
Title :
High luminous flux semiconductor wafer-bonded (AlxGa1-x)0.5In0.5P/GaP large area light-emitting diodes
Author :
Kish, F.A. ; Vanderwater, D.A. ; Trott, Gary R.
Author_Institution :
Hewlett-Packard
fYear :
1994
fDate :
6/16/1905 12:00:00 AM
Firstpage :
190
Lastpage :
193
Keywords :
Gallium arsenide; Gold; Legged locomotion; Light emitting diodes; Packaging; Power generation; Substrates; Thermal resistance; Tungsten; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1994. 52nd Annual
Type :
conf
DOI :
10.1109/DRC.1994.1009461
Filename :
1009461
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1722810
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