Dielectric and breakdown studies on Nd2O3 and NdF3 thin films

The authors have systematically investigated the dielectric and breakdown characteristics of vacuum-deposited Nd₂O₃ and NdF₃ thin films over a wide range of frequency and temperature. From the loss characteristics the relaxation effect observed in NdF₃ films is attributed to a dielectric relaxation phenomenon arising from the dipolar orientation. The relaxation times for the two types of dipole relaxation, at 423 K, are 3.987×10^-8 s and 7.24×10^-6 s, respectively. The dipole moment, dipole strength, and dipole concentration have been estimated as 1.071×10^-27 cm, 2.34×10⁴, and 3.01×10²⁷ m^-3, respectively. The dependence of thickness and temperature on the breakdown field follows the Forlani-Minnja electron avalanche theory