DocumentCode :
1722914
Title :
SEE sensitivity determination of high-density DRAMs with limited-range heavy ions
Author :
Koga, R. ; Crain, S.H. ; Yu, P. ; Crawford, K.B.
Author_Institution :
Aerosp. Corp., Los Angeles, CA, USA
fYear :
2001
fDate :
6/23/1905 12:00:00 AM
Firstpage :
182
Lastpage :
189
Abstract :
We have devised ways to measure the SEE sensitivity of plastic-encapsulated, high-density DRAMs with the use of limited-range heavy ions. The sensitivity at low LET regions is verified using a few species of ions with a long range
Keywords :
DRAM chips; integrated circuit testing; plastic packaging; radiation hardening (electronics); SEE sensitivity; high-density DRAMs; limited-range heavy ions; low LET regions; plastic encapsulation; single-event effect measurements; test devices; Aerospace testing; Cyclotrons; Inorganic materials; Ion accelerators; Laboratories; Lead; Plastic packaging; Random access memory; SDRAM; Telephony;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 2001 IEEE
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-7199-2
Type :
conf
DOI :
10.1109/REDW.2001.960479
Filename :
960479
Link To Document :
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