Title :
Mechanically reliable MEMS variable capacitor using single crystalline silicon (SCS) structure
Author :
Kim, Jong-Man ; Lee, Sanghyo ; Kim, Jung-Mu ; Baek, Chang-Wook ; Kwon, Youngwoo ; Kim, Yong-Kweon
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea
Abstract :
In this paper, we firstly proposed a mechanically reliable parallel-plate type variable capacitor with a single crystalline silicon (SCS) supporting structure. The demonstrated variable capacitor was fabricated using an SiOG (silicon-on-glass) process, and both mechanical and electrical characteristics were measured. Total chip size was 1.05 mm×0.72 mm, and the pull-in voltage was measured to be 37 V. With and without the applied DC bias, the measured S11 and S21 were changed from -15.6 dB to -5.1 dB, and from -0.49 dB to -2.3 dB at 30 GHz, respectively. The measured capacitance at the up and the down state was 30 fF and 140 fF, respectively. Therefore, the capacitance ratio is calculated to be 4.67.
Keywords :
micromechanical devices; reliability; silicon-on-insulator; varactors; 0.72 mm; 1.05 mm; 140 fF; 30 GHz; 30 fF; 37 V; MEMS variable capacitor; Si; SiOG; capacitance ratio; capacitor mechanical reliability; parallel-plate type variable capacitor; silicon-on-glass; single crystalline structure; Capacitance; Capacitors; Crystallization; Electric variables; Electric variables measurement; Mechanical variables measurement; Micromechanical devices; Semiconductor device measurement; Silicon; Size measurement;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
DOI :
10.1109/SENSOR.2005.1496643