5GHz low-phase-noise oscillator based on FBAR with low TCF

Author

Zhang, Hao ; Kim, Jongjin ; Pang, Wei ; Yu, Hongyu ; Kim, Eun Sok

Author_Institution

Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

Volume

1

fYear

2005

Firstpage

1100

Abstract

A 5 GHz oscillator with phase noise of -109.5 dBc/Hz at 100 kHz offset (more than 10 dBc/Hz better than the best LC oscillator and 4 dBc/Hz better than the best value reported in the literature) has recently been demonstrated with a 5 GHz Al/ZnO/Al/SiO₂ FBAR (film bulk acoustic resonator). The 5 GHz FBAR is fabricated through a simple, clean, and CMOS-compatible fabrication process, and is measured to have Q of about 300, K_t² of 4.3% and TCF (temperature coefficient of frequency) of -8.7 ppm/°C between 25 and 100°C.

Keywords

Q-factor; acoustic resonators; aluminium; bulk acoustic wave devices; microwave oscillators; phase noise; silicon compounds; zinc compounds; 25 to 100 degC; 5 GHz; Al-ZnO-Al-SiO₂; CMOS-compatible fabrication process; FBAR Q-factor; film bulk acoustic resonator; low TCF FBAR; low-phase-noise oscillator; temperature coefficient of frequency; Artificial intelligence; Band pass filters; Fabrication; Film bulk acoustic resonators; Frequency measurement; Local oscillators; Pollution measurement; Resonant frequency; Silicon; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on

Print_ISBN

0-7803-8994-8

Type

conf

DOI

10.1109/SENSOR.2005.1496648

Filename

1496648