DocumentCode :
1723400
Title :
A low-power driving scheme for a-Si:H active-matrix organic light-emitting diode displays
Author :
Chaji, G.Reza ; Safavian, Nader ; Nathan, Arokia
Author_Institution :
Dept. of ECE, Waterloo Univ., Ont., Canada
fYear :
2005
Firstpage :
119
Lastpage :
122
Abstract :
This paper describes a low-power driving scheme along with a pixel circuit based on hydrogenated amorphous silicon (a-Si:H) technology for active matrix organic light emitting diode (AMOLED) displays. The driving scheme can provide different current levels for the OLED while compensating for long-term (and gradual) instabilities caused by material defect metastability which will make it amenable for use in AMOLED displays. Moreover, since the threshold voltage is known in this method, it can be used to compensate for the time-dependent errors of the charge injection and clock feed-through effects. Therefore, the error for a 3V shift in the VT of T1 is almost zero. More importantly, it has low power consumption because the line capacitance is charged just one time during the programming cycle. For example, the total power consumption of a QVGA array (240*320) is expected to be less than 1.5W.
Keywords :
LED displays; amorphous semiconductors; driver circuits; elemental semiconductors; hydrogen; low-power electronics; organic light emitting diodes; silicon; 3 V; AMOLED displays; Si:H; active matrix organic light emitting diode displays; charge injection; clock feed through effects; hydrogenated amorphous silicon technology; low-power driving scheme; material defect metastability; pixel circuit; Active matrix organic light emitting diodes; Active matrix technology; Amorphous silicon; Circuits; Clocks; Energy consumption; Flat panel displays; Metastasis; Organic light emitting diodes; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE-NEWCAS Conference, 2005. The 3rd International
Print_ISBN :
0-7803-8934-4
Type :
conf
DOI :
10.1109/NEWCAS.2005.1496658
Filename :
1496658
Link To Document :
بازگشت