Integrated transmission lines for complementary cross-coupled bandpass filters in ΣΔ modulators

Author

Zahabi, Ali ; Anis, Muhammad ; Ortmanns, Maurits

Author_Institution

Inst. of Microelectron., Univ. of Ulm, Ulm, Germany

fYear

2012

Firstpage

241

Lastpage

244

Abstract

In this paper, the properties of various types of transmission lines (TLs) intended for an integrated RF TL based sigma delta modulator (ITLSDM) are extracted. The EM simulator is used to achieve accurate models for TLs in a 180nm CMOS technology. The effects of TL parameters are compared and studied in order to achieve the guidelines, which save the area and power consumption of the modulator. The results are verified with an architecture, which is based on complementary cross-coupled bandpass filter (C-BPF) with an auxiliary negative transconductance (ANG). This filter is employed in a 9.6GHz 4^th order f_s/4 bandpass SDM tuned at a center frequency of 2.4GHz.

Keywords

CMOS integrated circuits; band-pass filters; coupled circuits; coupled transmission lines; microwave integrated circuits; sigma-delta modulation; ΣΔ modulator; 4^th order f_s-4 bandpass SDM tuning; ANG; C-BPF; CMOS technology; EM simulator; ITLSDM; auxiliary negative transconductance; complementary cross-coupled bandpass filter; frequency 2.4 GHz; frequency 9.6 GHz; integrated RF TL parameter; integrated transmission line; power consumption; sigma delta modulator; size 180 nm; Band pass filters; CMOS integrated circuits; Coplanar waveguides; Metals; Modulation; Q factor; Substrates; complementary cross-coupled bandpass filter (C-BPF); integrated transmission line (ITL); resonator; sigma-delta modulator (SDM);

fLanguage

English

Publisher

ieee

Conference_Titel

New Circuits and Systems Conference (NEWCAS), 2012 IEEE 10th International

Conference_Location

Montreal, QC

Print_ISBN

978-1-4673-0857-1

Electronic_ISBN

978-1-4673-0858-8

Type

conf

DOI

10.1109/NEWCAS.2012.6329001

Filename

6329001