Title :
Distortion in RF CMOS short channel low noise amplifiers
Author :
Baki, Rola A. ; Tsang, Tommy K K ; El-Gamal, Mourad N.
Author_Institution :
Microelectron. And Comput. Syst. Lab., McGill Univ., Montreal, Que., Canada
Abstract :
An approach to estimate the distortion in CMOS short-channel (0.18 μm gate length) RF low noise amplifiers (LNA), based on Volterra´s series, is presented. Compact and accurate frequency-dependent closed form expressions describing the effects of the different transistor parameters on harmonic distortion are derived. For the first time, the second order distortion (HD2), which is crucial in homodyne receivers, is studied. The analytical analysis is verified through simulations and measured results of a 0.18 μm CMOS 5.8GHz folded-cascode LNA prototype chip geared towards sub-IV operation. Distortion-aware design guidelines for RF CMOS LNA´s are provided throughout the paper.
Keywords :
CMOS integrated circuits; Volterra series; harmonic distortion; integrated circuit design; microwave amplifiers; radiofrequency integrated circuits; 0.18 micron; 5.8 GHz; CMOS low noise amplifiers; Volterra series; distortion-aware design; folded-cascode LNA; harmonic distortion; homodyne receivers; second order distortion; transistor parameters; Circuits; Frequency domain analysis; Kernel; Laplace equations; Low-noise amplifiers; Nonlinear distortion; Radio frequency; Radiofrequency amplifiers; Transfer functions; Voltage;
Conference_Titel :
IEEE-NEWCAS Conference, 2005. The 3rd International
Print_ISBN :
0-7803-8934-4
DOI :
10.1109/NEWCAS.2005.1496667
