Distortion in RF CMOS short channel low noise amplifiers

Author

Baki, Rola A. ; Tsang, Tommy K K ; El-Gamal, Mourad N.

Author_Institution

Microelectron. And Comput. Syst. Lab., McGill Univ., Montreal, Que., Canada

fYear

2005

Firstpage

369

Lastpage

372

Abstract

An approach to estimate the distortion in CMOS short-channel (0.18 μm gate length) RF low noise amplifiers (LNA), based on Volterra´s series, is presented. Compact and accurate frequency-dependent closed form expressions describing the effects of the different transistor parameters on harmonic distortion are derived. For the first time, the second order distortion (HD2), which is crucial in homodyne receivers, is studied. The analytical analysis is verified through simulations and measured results of a 0.18 μm CMOS 5.8GHz folded-cascode LNA prototype chip geared towards sub-IV operation. Distortion-aware design guidelines for RF CMOS LNA´s are provided throughout the paper.

Keywords

CMOS integrated circuits; Volterra series; harmonic distortion; integrated circuit design; microwave amplifiers; radiofrequency integrated circuits; 0.18 micron; 5.8 GHz; CMOS low noise amplifiers; Volterra series; distortion-aware design; folded-cascode LNA; harmonic distortion; homodyne receivers; second order distortion; transistor parameters; Circuits; Frequency domain analysis; Kernel; Laplace equations; Low-noise amplifiers; Nonlinear distortion; Radio frequency; Radiofrequency amplifiers; Transfer functions; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE-NEWCAS Conference, 2005. The 3rd International

Print_ISBN

0-7803-8934-4

Type

conf

DOI

10.1109/NEWCAS.2005.1496667

Filename

1496667