DocumentCode
1723808
Title
A 1 V low-power low-noise DTMOS based class AB opamp
Author
Achigui, Herve F. ; Fayomi, Christian J B ; Sawan, Mohamad
Author_Institution
Dept. of Electr. Eng., Ecole Polytechnique de Montreal, Que., Canada
fYear
2005
Firstpage
307
Lastpage
310
Abstract
In this paper, the authors described a novel class AB opamp based on dynamic threshold voltage transistors (DTMOS) for low voltage (1-V), low power and low noise applications. The opamp is used to build the front-end receiver part of a near infrared spectroreflectometry (NIRS) device. The opamp has a two-stage configuration; DTMOS pseudo pMOS differential input pairs are used for input common-mode range enhancement, followed by a single ended class AB output. Experimental measurements from previous designs confirm the usage of a DTMOS device to build a 1-V opamp, using standard 0.18-μm CMOS technology. The performed post-layout simulation results show an input referred noise of 107 nV/√Hz at 1 kHz, and a power consumption of 33.1 μW under 5 pF and 10 kΩ loads. The dc open loop gain is 60 dB, and a unity frequency of 2.73 MHz. The opamp has a CMRR of 100 dB, and input and output swings of 0.6 V and 0.8 V respectively.
Keywords
CMOS analogue integrated circuits; biomedical electronics; biomedical equipment; infrared spectroscopy; low-power electronics; operational amplifiers; 0.18 micron; 0.6 V; 0.8 V; 1 V; 1 kHz; 10 kohm; 2.73 MHz; 33.1 muW; 5 pF; 60 dB; class AB opamp; dc open loop gain; dynamic threshold voltage transistors; near infrared spectroreflectometry; Absorption; Biological tissues; Biomedical imaging; Laboratories; Light scattering; Optical filters; Optical receivers; Optical refraction; Optical scattering; Particle scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE-NEWCAS Conference, 2005. The 3rd International
Print_ISBN
0-7803-8934-4
Type
conf
DOI
10.1109/NEWCAS.2005.1496678
Filename
1496678
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