DocumentCode
1724223
Title
Ge films on GaAs: preparation, properties and application to temperature sensors
Author
Mitin, V.F.
Author_Institution
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Volume
2
fYear
1997
Firstpage
551
Abstract
Several types of resistance thermometers based on Ge films on GaAs substrates are developed and fabricated. They can operate in the 0.5 to 300, 77 to 400 and 200 to 500 K temperature ranges. The thermometric characteristics of the devices are presented
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; resistance thermometers; semiconductor thin films; 0.5 to 500 K; GaAs; Ge-GaAs; elemental semiconductors; resistance thermometers; semiconductor thin films; temperature sensors; thermometric characteristics; Charge carriers; Gallium arsenide; Impurities; Magnetic field measurement; Optical films; Optical sensors; Substrates; Temperature distribution; Temperature measurement; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.632903
Filename
632903
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