Title :
Ge films on GaAs: preparation, properties and application to temperature sensors
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
Several types of resistance thermometers based on Ge films on GaAs substrates are developed and fabricated. They can operate in the 0.5 to 300, 77 to 400 and 200 to 500 K temperature ranges. The thermometric characteristics of the devices are presented
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; resistance thermometers; semiconductor thin films; 0.5 to 500 K; GaAs; Ge-GaAs; elemental semiconductors; resistance thermometers; semiconductor thin films; temperature sensors; thermometric characteristics; Charge carriers; Gallium arsenide; Impurities; Magnetic field measurement; Optical films; Optical sensors; Substrates; Temperature distribution; Temperature measurement; Temperature sensors;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.632903
