• DocumentCode
    1724404
  • Title

    Electrostatic polysilicon microrelays integrated with MOSFETs

  • Author

    Grétillat, M.A. ; Thiébaud, P. ; de Rooij, N.F. ; Linder, C.

  • Author_Institution
    Inst. of Microtechnol., Neuchatel Univ., Switzerland
  • fYear
    1994
  • fDate
    6/16/1905 12:00:00 AM
  • Firstpage
    97
  • Lastpage
    101
  • Abstract
    The fabrication and characterization of electrostatically-driven microrelays integrated together with IC components are presented. The mechanical part of the microrelays consists of a polysilicon-silicon nitride-polysilicon microbridge realized by sacrificial layer technology and allowing one to separate the actuation and the working circuit. The main operational parameters are actuation voltages in the 50 V to 75 V range depending on the beam lengths of the relays; switching frequencies up to 20 kHz with negligible electrical cross-talk between actuation and working port; a maximum measured frequency of 75 kHz without damaging the microrelay; a rise time of 4 μs and a fall time of 1 μs. First experiments in nitrogen atmosphere have shown that the relay is able to cycle over 109 times with no significant changes in its electromechanical properties
  • Keywords
    electrostatic devices; field effect transistor switches; micromechanical devices; semiconductor relays; silicon; 1 to 4 mus; 20 to 75 kHz; 50 to 75 V; IC components; MOSFETs; Si-SiN-Si; actuation voltages; electrical cross-talk; electromechanical properties; electrostatic polysilicon microrelays; fabrication; fall time; integration; polysilicon-silicon nitride-polysilicon microbridge; rise time; sacrificial layer technology; switching frequencies; Atmospheric measurements; Electrostatics; Fabrication; Frequency measurement; Integrated circuit technology; MOSFETs; Microrelays; Relays; Switching frequency; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 1994, MEMS '94, Proceedings, IEEE Workshop on
  • Conference_Location
    Oiso
  • Print_ISBN
    0-7803-1833-1
  • Type

    conf

  • DOI
    10.1109/MEMSYS.1994.555605
  • Filename
    555605