DocumentCode
1724506
Title
Self aligned BM for VLSI using a new diffusion technique for shallow base formation
Author
Johnson, F.S. ; Harris, G.S. ; Wortman, J.J. ; özturk, M.C.
Author_Institution
North Carolina State University
fYear
1993
fDate
6/15/1905 12:00:00 AM
Firstpage
18
Lastpage
19
Keywords
Annealing; Bipolar transistors; Boron; Contact resistance; Etching; Fabrication; Implants; Ion implantation; Shadow mapping; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1993. 51st Annual
Type
conf
DOI
10.1109/DRC.1993.1009562
Filename
1009562
Link To Document