Author :
Crabbe, E. ; Meyerson, B. ; Harame, D. ; Stork, I. ; Megdanis, A. ; Cotte, I. ; Chu, J. ; Gilbert, Markus ; Stanis, C. ; Comfort, I. ; Patton, G. ; Subbanna, S.
Abstract :
A novel low-thermal cyclc proccss was used to fabricatc epitaxial SiGe-base heterojunction bipolar transistors (HBTs) with record unity current gain cutoff frequencies. The process includes an in situ phosphorus-dopcd polysilicon emitter which requires only a 800°C-10s anneal. A peak fT of 113 GHz at VCB of 1V was obtained for an intrinsic base sheet resistance of 7 kΩ/square.
