• DocumentCode
    1724567
  • Title

    Temperature and scaling behavior of Strained-Si N-MOSFETs

  • Author

    Weise, J. ; Hoyt, J.L. ; Gibbons, J.F.

  • Author_Institution
    Solid State Electronics Lab.
  • fYear
    1993
  • fDate
    6/15/1905 12:00:00 AM
  • Firstpage
    24
  • Lastpage
    25
  • Keywords
    Buffer layers; Electron mobility; MOSFET circuits; Resistors; Scattering; Strain control; Temperature control; Thermal conductivity; Thermal resistance; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1993. 51st Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1993.1009565
  • Filename
    1009565
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1724567