High field semiconductor-dielectric systems: a special case of the classical two-insulator systems

Some essential properties of the prebreakdown and breakdown phenomena in high-field semiconductor-dielectric systems (HFSDS) are presented and discussed in terms of a two-channel model and a system flashover sensitivity concept. The phenomena are considered for high-field Si-vacuum and -gas (SF₆, air, N₂, SF ₆ mixture) systems. Two possible types of breakdown phenomena in HFSDS, totally different from each other, are proposed: (1) surface flashover as a discharge at the semiconductor-dielectric interface, and (2) bulk breakdown, where all the processes take place in the semiconductor without any role on the part of the ambient. It is concluded that HFSDS is a special case of the classical high-voltage solid-insulator-vacuum or -gas dielectric systems