Title :
A new recessed gate MOSFET structure with the graded source/drain
Author :
Lee, Woo-Hyeong ; Park, Young-June ; Lee, Jong Duk
Author_Institution :
Seoul National University
fDate :
6/15/1905 12:00:00 AM
Keywords :
Doping profiles; Electrical resistance measurement; Electron devices; FETs; Hot carriers; MOSFET circuits; Threshold voltage; Transconductance;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009567
