DocumentCode

1724622

Title

A new recessed gate MOSFET structure with the graded source/drain

Author

Lee, Woo-Hyeong ; Park, Young-June ; Lee, Jong Duk

Author_Institution

Seoul National University

fYear

1993

fDate

6/15/1905 12:00:00 AM

Firstpage

28

Lastpage

29

Keywords

Doping profiles; Electrical resistance measurement; Electron devices; FETs; Hot carriers; MOSFET circuits; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1993. 51st Annual

Type

conf

DOI

10.1109/DRC.1993.1009567

Filename

1009567