• DocumentCode
    1724623
  • Title

    Ternary content addressable memory cells designed using ambipolar carbon nanotube transistors

  • Author

    Nepal, Kundan

  • Author_Institution
    Sch. of Eng., Univ. of St Thomas, St. Paul, MN, USA
  • fYear
    2012
  • Firstpage
    421
  • Lastpage
    424
  • Abstract
    This paper explores the use of carbon nanotube transistors and their ambipolar properties to create ternary content addressable memory (CAM) cells. We show designs and simulation results for a traditional ternary cell created using two storage elements as well as an area efficient (up to 31% lower) truly 3-valued ternary cell.
  • Keywords
    carbon nanotube field effect transistors; content-addressable storage; integrated circuit design; CAM cells; ambipolar carbon nanotube transistors; ambipolar property; storage elements; ternary content addressable memory cells; truly three-valued ternary cell; CNTFETs; Computer aided manufacturing; Electron tubes; Logic gates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    New Circuits and Systems Conference (NEWCAS), 2012 IEEE 10th International
  • Conference_Location
    Montreal, QC
  • Print_ISBN
    978-1-4673-0857-1
  • Electronic_ISBN
    978-1-4673-0858-8
  • Type

    conf

  • DOI
    10.1109/NEWCAS.2012.6329046
  • Filename
    6329046
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1724623