Title :
Ternary content addressable memory cells designed using ambipolar carbon nanotube transistors
Author_Institution :
Sch. of Eng., Univ. of St Thomas, St. Paul, MN, USA
Abstract :
This paper explores the use of carbon nanotube transistors and their ambipolar properties to create ternary content addressable memory (CAM) cells. We show designs and simulation results for a traditional ternary cell created using two storage elements as well as an area efficient (up to 31% lower) truly 3-valued ternary cell.
Keywords :
carbon nanotube field effect transistors; content-addressable storage; integrated circuit design; CAM cells; ambipolar carbon nanotube transistors; ambipolar property; storage elements; ternary content addressable memory cells; truly three-valued ternary cell; CNTFETs; Computer aided manufacturing; Electron tubes; Logic gates; Threshold voltage;
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2012 IEEE 10th International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0857-1
Electronic_ISBN :
978-1-4673-0858-8
DOI :
10.1109/NEWCAS.2012.6329046
