DocumentCode
1724675
Title
A bandwidth enhancement technique for CMOS TIAs driven by large photodiodes
Author
Taghavi, M.H. ; Belostotski, L. ; Haslett, J.W.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada
fYear
2012
Firstpage
433
Lastpage
436
Abstract
A new method of enhancing the bandwidth of a conventional series-peaked transimpedance amplifier (TIA) driven by a large photodiode is introduced. It is shown that by using N identical TIAs in parallel the circuit bandwidth can be significantly improved. The advantage of the proposed technique is in its ability to provide large bandwidth enhancements in multi-GHz frequency ranges even when photodiode capacitance is large, without a noticeable increase in TIA core circuit area. This technique is supported by a design example simulated in a 0.13μm standard CMOS technology. Simulation results show a 3dB bandwidth of 26GHz with 0.5pF photodiode capacitance, a transimpedance gain of 51dBΩ and group delay of 33.5±4ps. The proposed technique shows an overall bandwidth enhancement ratio of 3.25 with less than 0.1dB gain ripple resulting in higher bandwidth enhancement than previously reported for large photodiode capacitances.
Keywords
CMOS integrated circuits; circuit simulation; microwave amplifiers; operational amplifiers; photocapacitance; photodiodes; CMOS TIA; TIA core circuit area; bandwidth 26 GHz; bandwidth enhancement technique; circuit bandwidth enhancement; group delay; multigiga hertz frequency ranges; photodiode capacitance; series-peaked transimpedance amplifier; size 0.13 mum; standard CMOS technology; transimpedance gain; Bandwidth; CMOS integrated circuits; CMOS technology; Capacitance; Inductance; Inductors; Photodiodes;
fLanguage
English
Publisher
ieee
Conference_Titel
New Circuits and Systems Conference (NEWCAS), 2012 IEEE 10th International
Conference_Location
Montreal, QC
Print_ISBN
978-1-4673-0857-1
Electronic_ISBN
978-1-4673-0858-8
Type
conf
DOI
10.1109/NEWCAS.2012.6329049
Filename
6329049
Link To Document