• DocumentCode
    1724785
  • Title

    Novel cross-point resistive switching memory with self-formed schottky barrier

  • Author

    Jo, Minseok ; Seong, Dong-jun ; Kim, Seonghyun ; Lee, Joonmyoung ; Lee, Wootae ; Park, Ju-Bong ; Park, Sangsoo ; Jung, Seungjae ; Shin, Jungho ; Lee, Daeseok ; Hwang, Hyunsang

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
  • fYear
    2010
  • Firstpage
    53
  • Lastpage
    54
  • Abstract
    By characterizing the resistive switching state in Al/PCMO device, we propose, for the first time, the feasibility of cross-point memory without any selection device. Self-formed Schottky barrier by redox reaction at Al/PCMO interface can be used as a selection device. Using self-formed Schottky barrier, we can build simple 4F2 cross-point memory array without additional process steps.
  • Keywords
    Schottky barriers; random-access storage; 4F2 cross-point memory array; Al/PCMO device; cross-point resistive switching memory; redox reaction; self-formed Schottky barrier; Arrays; Electrodes; Nonhomogeneous media; Resistance; Switches; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2010 Symposium on
  • Conference_Location
    Honolulu
  • Print_ISBN
    978-1-4244-5451-8
  • Electronic_ISBN
    978-1-4244-5450-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2010.5556121
  • Filename
    5556121
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1724785