Title :
Highly scalable STT-MRAM with MTJs of top-pinned structure in 1T/1MTJ cell
Author :
Lee, Young Min ; Yoshida, Chikakko ; Tsunoda, Koji ; Umehara, Shinjiro ; Aoki, Masaki ; Sugii, Toshihiro
Author_Institution :
Div. of Technol. Integration, Fujitsu Labs., Ltd., Atsugi, Japan
Abstract :
We report on spin transfer torque magnetoresistance random access memory (STT-MRAM) with magnetic tunnel junctions (MTJs) that have a top-pinned stacking structure. By adopting the top-pinned structure, in which a pinned layer and an antiferromagnetic layer are deposited above the MgO tunnel barrier, we can relieve the current limitation caused by driving power asymmetry of the transistor in a 1T/1M structure without an additional current path to make a reverse connection between the transistor and the top side of the MTJs, resulting in the cell area being reduced by about half.
Keywords :
MRAM devices; magnetic tunnelling; 1T-1MTJ cell; MgO tunnel barrier; antiferromagnetic layer; high scalable STT-MRAM; magnetic tunnel junctions; power asymmetry; spin transfer torque magnetoresistance random access memory; top-pinned stacking structure; top-pinned structure; transistor; Magnetic hysteresis; Magnetic resonance imaging; Magnetic tunneling; Metals; Switches; Transistors; Writing;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556123
