DocumentCode
1724853
Title
Non-volatile spin-transfer torque RAM (STT-RAM): Data, analysis and design requirements for thermal stability
Author
Driskill-Smith, A. ; Watts, S. ; Nikitin, V. ; Apalkov, D. ; Druist, D. ; Kawakami, R. ; Tang, X. ; Luo, X. ; Ong, A. ; Chen, E.
Author_Institution
Grandis, Inc., Milpitas, CA, USA
fYear
2010
Firstpage
51
Lastpage
52
Abstract
The thermal stability of STT-RAM is measured by multiple techniques and compared with theory. The read disturb rate is found to be determined by the standby thermal stability, but the error rate at target read currents is higher than expected. The implication for the design of 1 Gb STT-RAM is that 10 year room temperature data retention as well as 1000 FIT read disturb error rate requires thermal stability of greater than 75.
Keywords
random-access storage; thermal stability; STT-RAM; design requirements; nonvolatile spin-transfer torque RAM; read disturb rate; standby thermal stability; Current measurement; Error analysis; Magnetic tunneling; Stability analysis; Switches; Thermal stability; Torque; STT-RAM; spin transfer torque; spintronics;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location
Honolulu
Print_ISBN
978-1-4244-5451-8
Electronic_ISBN
978-1-4244-5450-1
Type
conf
DOI
10.1109/VLSIT.2010.5556124
Filename
5556124
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