Title :
Physics of breakdown in InAlAs/InGaAs MODFETs
Author :
Bahl, Sandeep R. ; Alamo, Jesús A del ; Dick, Jürgen ; Schildberg, Steffen
Author_Institution :
Massachusetts Institute of Technology
fDate :
6/15/1905 12:00:00 AM
Keywords :
Breakdown voltage; Electric breakdown; Electrons; HEMTs; Indium compounds; Indium gallium arsenide; Insulation; MODFETs; Photonic band gap; Physics;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009577
