• DocumentCode
    1724871
  • Title

    Physics of breakdown in InAlAs/InGaAs MODFETs

  • Author

    Bahl, Sandeep R. ; Alamo, Jesús A del ; Dick, Jürgen ; Schildberg, Steffen

  • Author_Institution
    Massachusetts Institute of Technology
  • fYear
    1993
  • fDate
    6/15/1905 12:00:00 AM
  • Firstpage
    51
  • Lastpage
    52
  • Keywords
    Breakdown voltage; Electric breakdown; Electrons; HEMTs; Indium compounds; Indium gallium arsenide; Insulation; MODFETs; Photonic band gap; Physics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1993. 51st Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1993.1009577
  • Filename
    1009577
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1724871