مرکز منطقه ای اطلاع رساني علوم و فناوري - OMCVD grown AlInAs/GaInAs HEMT´s with AlGaInP schottky layer

DocumentCode :

1724908

Title :

OMCVD grown AlInAs/GaInAs HEMT´s with AlGaInP schottky layer

Author :

Chough, K.B. ; Hong, W.P. ; Caneau, C. ; Song, J.I. ; Hayes, J.R.

Author_Institution :

Bellcore

fYear :

1993

fDate :

6/15/1905 12:00:00 AM

Firstpage :

Lastpage :

Keywords :

Aluminum; Doping; Electric breakdown; Gate leakage; HEMTs; Leakage current; Springs; Transconductance; Voltage; Wideband;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Device Research Conference, 1993. 51st Annual

Type :

conf

DOI :

10.1109/DRC.1993.1009578

Filename :

1009578

Link To Document :