Title :
SiGe CMOS on (110) channel orientation with mobility boosters : Surface orientation, channel directions, and uniaxial strain
Author :
Oh, J. ; Lee, S.-H. ; Min, K.S. ; Huang, J. ; Min, B.G. ; Sassman, B. ; Jeon, K. ; Loh, W.-Y. ; Barnett, J. ; Ok, I. ; Kang, C.Y. ; Smith, C. ; Ko, D.-H. ; Kirsch, P.D. ; Jammy, R.
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
We report a comprehensive study of surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS. On a (110) surface, SiGe nMOS demonstrates a higher electron mobility than Si (110) nMOS. The hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <;110> channel direction with appropriate uniaxial channel strain. Results obtained in this work advance the integration technique of high mobility CMOS on a single SiGe (110)<;110> channel orientation to enhance overall performance without the process complexity associated with hybrid channel CMOS approaches.
Keywords :
CMOS integrated circuits; Ge-Si alloys; circuit complexity; electron mobility; hole mobility; semiconductor materials; SiGe; SiGe CMOS; SiGe nMOS; SiGe pMOS hole mobility; channel directions; channel orientation; electron mobility; hybrid channel CMOS approach; mobility boosters; process complexity; surface orientation; uniaxial channel strain technology; CMOS integrated circuits; CMOS technology; International Electron Devices Meeting; Logic gates; MOS devices; Silicon; Silicon germanium;
Conference_Titel :
VLSI Technology (VLSIT), 2010 Symposium on
Conference_Location :
Honolulu
Print_ISBN :
978-1-4244-5451-8
Electronic_ISBN :
978-1-4244-5450-1
DOI :
10.1109/VLSIT.2010.5556127
