• DocumentCode
    1724934
  • Title

    Influence of the output harmonic networks of classes F and F−1 power amplifiers in LINC systems

  • Author

    Montesinos, Ronald ; Berland, Corinne ; Abi Hussein, Mazen ; Venard, Olivier ; Descamps, Philippe

  • Author_Institution
    LaMIPS, ENSICAEN UCBN, Caen, France
  • fYear
    2012
  • Firstpage
    477
  • Lastpage
    480
  • Abstract
    This paper presents the influence of the harmonic networks of class F and inverse F power amplifiers (PAs) in the LINC (LInear amplification using Non-linear Components) transmitter architecture. The analysis and design of these classes with CHIREIX combiner are realised using Agilent ADS software. We use for this work a GaN HEMT transistor from Cree. Performances of the system are evaluated using a 16QAM modulation at 900MHz with 5.63dB Peak-to-Average Power Ratio (PAPR). This study shows the advantages and drawbacks of even/odd harmonics in drain curves of these PA classes as well as the tradeoff linearity-efficiency for the LINC architecture.
  • Keywords
    III-V semiconductors; UHF power amplifiers; UHF transistors; gallium compounds; high electron mobility transistors; transmitters; wide band gap semiconductors; 16-QAM modulation; Agilent ADS software; CHIREIX combiner; GaN; HEMT transistor; LINC transmitter architecture; PAPR; class F power amplifiers; frequency 900 MHz; inverse F power amplifiers; linear amplification using nonlinear component transmitter architecture; output harmonic networks; peak-to-average power ratio; HEMTs; Harmonic analysis; Linearity; Modulation; Radio frequency; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    New Circuits and Systems Conference (NEWCAS), 2012 IEEE 10th International
  • Conference_Location
    Montreal, QC
  • Print_ISBN
    978-1-4673-0857-1
  • Electronic_ISBN
    978-1-4673-0858-8
  • Type

    conf

  • DOI
    10.1109/NEWCAS.2012.6329060
  • Filename
    6329060