DocumentCode
1724934
Title
Influence of the output harmonic networks of classes F and F−1 power amplifiers in LINC systems
Author
Montesinos, Ronald ; Berland, Corinne ; Abi Hussein, Mazen ; Venard, Olivier ; Descamps, Philippe
Author_Institution
LaMIPS, ENSICAEN UCBN, Caen, France
fYear
2012
Firstpage
477
Lastpage
480
Abstract
This paper presents the influence of the harmonic networks of class F and inverse F power amplifiers (PAs) in the LINC (LInear amplification using Non-linear Components) transmitter architecture. The analysis and design of these classes with CHIREIX combiner are realised using Agilent ADS software. We use for this work a GaN HEMT transistor from Cree. Performances of the system are evaluated using a 16QAM modulation at 900MHz with 5.63dB Peak-to-Average Power Ratio (PAPR). This study shows the advantages and drawbacks of even/odd harmonics in drain curves of these PA classes as well as the tradeoff linearity-efficiency for the LINC architecture.
Keywords
III-V semiconductors; UHF power amplifiers; UHF transistors; gallium compounds; high electron mobility transistors; transmitters; wide band gap semiconductors; 16-QAM modulation; Agilent ADS software; CHIREIX combiner; GaN; HEMT transistor; LINC transmitter architecture; PAPR; class F power amplifiers; frequency 900 MHz; inverse F power amplifiers; linear amplification using nonlinear component transmitter architecture; output harmonic networks; peak-to-average power ratio; HEMTs; Harmonic analysis; Linearity; Modulation; Radio frequency; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
New Circuits and Systems Conference (NEWCAS), 2012 IEEE 10th International
Conference_Location
Montreal, QC
Print_ISBN
978-1-4673-0857-1
Electronic_ISBN
978-1-4673-0858-8
Type
conf
DOI
10.1109/NEWCAS.2012.6329060
Filename
6329060
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