Study of the dependence of Ga0.47In0.53As/AlxIn1-xAs power HEMT breakdown voltage on schottky layer design and device layout
Author :
Brown, J.J. ; Brown, A.S. ; Rosenbaum, S.E. ; Schmitz, A.S. ; Matloubian, M. ; Larson, L.E. ; Melendes, M.A. ; Thompson, M.A.
Author_Institution :
Hughes Research Laboratories
fYear :
1993
fDate :
6/15/1905 12:00:00 AM
Firstpage :
55
Lastpage :
56
Keywords :
Artificial intelligence; Cutoff frequency; Density measurement; Electric breakdown; Gain measurement; HEMTs; Indium phosphide; Power generation; Power measurement; Transconductance;
