Title :
Scaling of copper seed layer thickness using plasma-enhanced ALD and an optimized precursor
Author :
Mao, Jiajun ; Eisenbraun, Eric ; Omarjee, Vincent ; Korolev, Andrey ; Dussarrat, Christian
Author_Institution :
Coll. of Nanoscale Sci. & Eng., Univ. at Albany-SUNY, Albany, NY, USA
Abstract :
A recently developed precursor, AbaCus, has been evaluated for use in ultra-low temperature copper deposition by PEALD. Film adhesion, platability and process window evaluation demonstrate a strong capability of this precursor to overcome current metallization challenges.
Keywords :
adhesion; atomic layer deposition; copper; plasma CVD; AbaCus; Cu; developed precursor; film adhesion; optimized precursor; plasma-enhanced ALD; platability; process window evaluation; seed layer thickness scaling; ultra-low temperature copper deposition; Adhesives; Conductivity; Copper; Films; Plasma temperature; Temperature measurement; AbaCus; BEOL; Copper; PE-ALD;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE/SEMI
Conference_Location :
Saratoga Springs, NY
Print_ISBN :
978-1-61284-408-4
Electronic_ISBN :
1078-8743
DOI :
10.1109/ASMC.2011.5898176
