Title :
Investigation of the structural and electrical characterization on ZrO2 addition for ALD HfO2 with La2O3 capping layer integrated metal-oxide semiconductor capacitors
Author :
Chiang, C.K. ; Chang, J.C. ; Liu, W.H. ; Liu, C.C. ; Lin, J.F. ; Yang, C.L. ; Wu, J.Y. ; Wang, S.J.
Author_Institution :
United Microelectron. Corp., Hsinchu, Taiwan
Abstract :
In this work, we report on ZrO2 position effect of ALD HfZrOx gate dielectric with a La2O3 capping layer for gate-first flow. The basic electrical characteristics of devices were compared with different ZrO2 position in HfZrOx dielectric. Experimental results show : (1) Under top La2O3 capping layer for n-type Metal-Oxide-Silicon capacitor (nMOSCAP) device, ZrO2 position on both of top and bottom in HfZrOx shows higher leakage (>;x5) current and Vfb shift (-0.18V) to band edge than HfO2 dielectric. (2) For the top La2O3 cap device, ZrO2 addition into ALD HfO2 can have significant shift on Jg and Vfb. Bottom La2O3 capping position stack has higher Jg (>;x4) and larger Vfb shift (-0.15V) than the top La2O3 cap position for nMOSCAP device.
Keywords :
MOS capacitors; atomic layer deposition; dielectric materials; hafnium compounds; lanthanum compounds; leakage currents; zirconium compounds; HfZrOx; La2O3; atomic layer deposition; capping layer integrated metal-oxide semiconductor capacitors; gate-first flow; leakage current; n-type metal-oxide-silicon capacitor; nMOSCAP device; voltage -0.15 V; voltage -0.18 V; Capacitance-voltage characteristics; Dielectrics; Films; Jamming; Leakage current; Logic gates; Photonic band gap;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE/SEMI
Conference_Location :
Saratoga Springs, NY
Print_ISBN :
978-1-61284-408-4
Electronic_ISBN :
1078-8743
DOI :
10.1109/ASMC.2011.5898177
