Investigation of the structural and electrical characterization on ZrO2 addition for ALD HfO2 with La2O3 capping layer integrated metal-oxide semiconductor capacitors

Author

Chiang, C.K. ; Chang, J.C. ; Liu, W.H. ; Liu, C.C. ; Lin, J.F. ; Yang, C.L. ; Wu, J.Y. ; Wang, S.J.

Author_Institution

United Microelectron. Corp., Hsinchu, Taiwan

fYear

2011

Firstpage

1

Lastpage

4

Abstract

In this work, we report on ZrO₂ position effect of ALD HfZrO_x gate dielectric with a La₂O₃ capping layer for gate-first flow. The basic electrical characteristics of devices were compared with different ZrO₂ position in HfZrO_x dielectric. Experimental results show : (1) Under top La₂O₃ capping layer for n-type Metal-Oxide-Silicon capacitor (nMOSCAP) device, ZrO₂ position on both of top and bottom in HfZrO_x shows higher leakage (>;x5) current and V_fb shift (-0.18V) to band edge than HfO₂ dielectric. (2) For the top La₂O₃ cap device, ZrO₂ addition into ALD HfO₂ can have significant shift on J_g and V_fb. Bottom La₂O₃ capping position stack has higher J_g (>;x4) and larger V_fb shift (-0.15V) than the top La₂O₃ cap position for nMOSCAP device.

Keywords

MOS capacitors; atomic layer deposition; dielectric materials; hafnium compounds; lanthanum compounds; leakage currents; zirconium compounds; HfZrO_x; La₂O₃; atomic layer deposition; capping layer integrated metal-oxide semiconductor capacitors; gate-first flow; leakage current; n-type metal-oxide-silicon capacitor; nMOSCAP device; voltage -0.15 V; voltage -0.18 V; Capacitance-voltage characteristics; Dielectrics; Films; Jamming; Leakage current; Logic gates; Photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE/SEMI

Conference_Location

Saratoga Springs, NY

ISSN

1078-8743

Print_ISBN

978-1-61284-408-4

Electronic_ISBN

1078-8743

Type

conf

DOI

10.1109/ASMC.2011.5898177

Filename

5898177