Title :
Fine-grained power-gating scheme of a nonvolatile logic-in-memory circuit for low-power motion-vector extraction
Author :
Sihotang, Magdalena ; Matsunaga, Shoun ; Hanyu, Takahiro
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
Data-transfer localization is a key technique to solve communication bottleneck between memory and logic modules in realizing high-speed VLSI systems, while it is difficult to use power-gating technique because volatile storage functions are distributed in a CMOS logic-circuit plane, which causes large power dissipation. In this paper, we utilize nonvolatile logic-in-memory (NV-LIM) architecture, where nonvolatile storage functions are distributed over a logic-circuit plane, to solve the above issues. As a typical example of the NV-LIM circuit, we apply it to motion-vector extraction. By the use of fine-grained power-gating technique, total power dissipation of the proposed hardware can be reduced to 60% in comparison with that of a conventional CMOS-only-based hardware.
Keywords :
CMOS logic circuits; CMOS memory circuits; VLSI; CMOS logic-circuit plane; NV-LIM circuit; data-transfer localization; fine-grained power-gating scheme; high-speed VLSI systems; large power dissipation; logic modules; low-power motion-vector extraction; memory modules; nonvolatile logic-in-memory circuit; volatile storage functions; CMOS integrated circuits; Computer architecture; Delay; Latches; Magnetic tunneling; Nonvolatile memory; Transistors; MRAM; fine-grained pipelining; image compression; logic-in-memory architecture; spintronics; sum-of-absolute-difference operation;
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2012 IEEE 10th International
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0857-1
Electronic_ISBN :
978-1-4673-0858-8
DOI :
10.1109/NEWCAS.2012.6329062