• DocumentCode
    1725014
  • Title

    Low-k etching using CF3I, a path to overcome current BEOL integration issues

  • Author

    Gildea, Adam J. ; Long, Justin C. ; Eisenbraun, Eric ; Omarjee, Vincent ; Stafford, Nathan ; Doniat, François ; Dussarrat, Christian

  • Author_Institution
    Coll. of Nanoscale Sci. & Eng., Univ. at Albany-SUNY, Albany, NY, USA
  • fYear
    2011
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    CF3I, a low greenhouse warming potential gas, has been used for low-k etching using an ICP reactor. Key parameters such as reactor pressure, bias power, ICP power and total gas flow rate were investigated to develop an optimized etch process. A comparison with standard fluorocarbons such as CF4, C4F8 or CF3H has been made to illustrate the performances of this low environmental impact chemistry.
  • Keywords
    air pollution; chemical reactors; etching; BEOL integration issues; CF3I; ICP power; ICP reactor; bias power; environmental impact chemistry; greenhouse warming potential gas; low-k etching; reactor pressure; standard fluorocarbons; total gas flow rate; Etching; Films; Gases; Iterative closest point algorithm; Plasmas; Resists; Silicon; BEOL; CF3I; Etching; Low-k; Plasma;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE/SEMI
  • Conference_Location
    Saratoga Springs, NY
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-61284-408-4
  • Electronic_ISBN
    1078-8743
  • Type

    conf

  • DOI
    10.1109/ASMC.2011.5898178
  • Filename
    5898178
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1725014