• DocumentCode
    1725041
  • Title

    New insight on VT stability of HK/MG stacks with scaling in 30nm FDSOI technology

  • Author

    Brunet, L. ; Garros, X. ; Casse, M. ; Weber, O. ; Andrieu, F. ; Fenouillet-Beranger, C. ; Perreau, P. ; Martin, F. ; Charbonnier, M. ; Lafond, D. ; Gaumer, C. ; Lhostis, S. ; Vidal, V. ; Brevard, L. ; Tosti, L. ; Denorme, S. ; Barnola, S. ; Damlencourt, J

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2010
  • Firstpage
    29
  • Lastpage
    30
  • Abstract
    In this paper it is shown that HfO2 and HfZrO oxides suffer from large VT instabilities, up to 230mV, when the device width (W) is scaled down to 80nm. It is explained by undesirable lateral oxygen diffusion through the spacers, which mainly modifies the metal workfunction in narrow transistors. HfSiO(N) oxides exhibit a much better immunity to this effect, attributed to a different crystallinity of the HK layer. Moreover, Al incorporation in the gate stack hardly changes the VT stability.
  • Keywords
    hafnium compounds; silicon compounds; silicon-on-insulator; HK-MG stacks; HfO2; HfSiO; HfZrO; VT stability; crystallinity; lateral oxygen diffusion; size 30 nm; size 80 nm; voltage 230 mV; Logic gates; MOS devices; Oxidation; Silicon; Tin; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2010 Symposium on
  • Conference_Location
    Honolulu
  • Print_ISBN
    978-1-4244-5451-8
  • Electronic_ISBN
    978-1-4244-5450-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2010.5556131
  • Filename
    5556131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1725041