Title :
High-speed, high-breakdown voltage InP/InGaAs double heterojunction bipolar transistors grown by MOMBE
Author :
Chau, Hin-Fai ; Beam, Edward A., III
Author_Institution :
Texas Instruments Inc.
fDate :
6/15/1905 12:00:00 AM
Keywords :
Current density; Current measurement; Cutoff frequency; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Message-oriented middleware; Molecular beam epitaxial growth; Voltage;
Conference_Titel :
Device Research Conference, 1993. 51st Annual
DOI :
10.1109/DRC.1993.1009590
