Title :
Use of neural network to model the FTIR spectra of PECVD silicon nitride films for cardiovascular pressure sensor applications
Author :
Thongvigitmanee, Thongchai ; Titiroongruang, Wisut ; Srihapat, Arckom ; Poyai, Amporn
Author_Institution :
Dept. of Electr. Eng., King Mongkut´´s Inst. of Technol. Ladkrabang, Bangkok, Thailand
Abstract :
In this paper, the empirical process models based on neural network are applied to discover the relationship between inputs and outputs of the plasma enhanced chemical deposition (PECVD) silicon nitride process. The design of experiments are based on a 26-2 fractional factorial experiment with four center replicate on six factors which are 1) the SiH4 flow rate, 2) the NH3 flow rate, 3) the N2 flow rate, 4) the chamber pressure, 5) the radio frequency (RF) power/distance between the wafer base and shower gas, and 6) the deposition temperature. Once these experiments are performed, different neural networks are applied to identify these six inputs to the chemical bonding information from the FTIR measurements. The best performances of neural networks for each response are selected based on the smallest prediction error. Then the three-dimensional surface plots are generated to qualitatively interpret factor effects. The corrosion testing in saline solution based on a potentiostatic measurement of an aluminum film with the protective PECVD silicon nitride is demonstrated. This measurement could be used as a tool to identify the best dense PECVD silicon nitride film in order to improve the protective performance of the existing recipe. The silicon nitride film is used as the final passivation layer of the cardiovascular pressure sensor.
Keywords :
Fourier transform spectra; bioceramics; biomedical measurement; bonds (chemical); cardiovascular system; corrosion testing; design of experiments; infrared spectra; neural nets; passivation; plasma CVD; plasma CVD coatings; potentiometers; pressure sensors; silicon compounds; FTIR spectra; NH3; PECVD; Si3N4; SiH4; aluminum film; cardiovascular pressure sensor; chamber pressure; chemical bonding; corrosion testing; design of experiments; flow rate; neural network; passivation; plasma enhanced chemical deposition; potentiostatic measurement; silicon nitride films; Artificial neural networks; Bonding; Films; Neurons; Semiconductor device measurement; Silicon; Substrates; FTIR; Modeling; neural networks; plasma-enhanced chemical vapor deposition (PECVD); silicon nitride film;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE/SEMI
Conference_Location :
Saratoga Springs, NY
Print_ISBN :
978-1-61284-408-4
Electronic_ISBN :
1078-8743
DOI :
10.1109/ASMC.2011.5898186