DocumentCode :
1725232
Title :
Forward transit delay in In0.53Ga0.47As heterojunction bipolar transistors with nonequilibrium electron transpor
Author :
Laskar, J. ; Noltenburg, R.N. ; Levi, A.F.J.
Author_Institution :
University of Hawaii
fYear :
1993
fDate :
6/15/1905 12:00:00 AM
Firstpage :
85
Lastpage :
86
Keywords :
Cutoff frequency; Delay; Electrons; Heterojunction bipolar transistors; Indium phosphide; Kinetic energy; Lattices; Scattering; Temperature dependence; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1993. 51st Annual
Type :
conf
DOI :
10.1109/DRC.1993.1009592
Filename :
1009592
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1725232
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