• DocumentCode
    1725232
  • Title

    Forward transit delay in In0.53Ga0.47As heterojunction bipolar transistors with nonequilibrium electron transpor

  • Author

    Laskar, J. ; Noltenburg, R.N. ; Levi, A.F.J.

  • Author_Institution
    University of Hawaii
  • fYear
    1993
  • fDate
    6/15/1905 12:00:00 AM
  • Firstpage
    85
  • Lastpage
    86
  • Keywords
    Cutoff frequency; Delay; Electrons; Heterojunction bipolar transistors; Indium phosphide; Kinetic energy; Lattices; Scattering; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1993. 51st Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1993.1009592
  • Filename
    1009592
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1725232