DocumentCode :
1725268
Title :
Effects of collector doping on dc and rf performance of AiInAs/GaInAs/InP double heterojunction bipolar transistors
Author :
Hafizi, M. ; Liu, T. ; Rensch, D.B. ; Stanchina, W.E.
Author_Institution :
Hughes Research Laboratories
fYear :
1993
fDate :
6/15/1905 12:00:00 AM
Firstpage :
87
Lastpage :
88
Keywords :
Current density; Doping; Double heterojunction bipolar transistors; Geometry; Indium phosphide; Knee; Laboratories; Microwave devices; Radio frequency; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1993. 51st Annual
Type :
conf
DOI :
10.1109/DRC.1993.1009593
Filename :
1009593
Link To Document :
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