DocumentCode :
1725289
Title :
Analog ICs simulations using space charge waves in two-valley semiconductor films
Author :
García-B, Abel ; Grimalsky, Volodymir ; Gutiérrez-D, Edmundo
Author_Institution :
Dept. of Electron., INAOE, Puebla, Mexico
fYear :
2005
Firstpage :
239
Lastpage :
242
Abstract :
Analog ICs simulations using space charge waves in two-valley semiconductor for microwave and millimeter range signal processing is presented. The formulation incorporates the full set of Maxwell´s equations and the equations of motion of carriers based on a two-valley fully specified model providing a quantitative description of the space charge waves in thin-film n-GaAs. Numerical solutions to the system of equations indicate that the propagation and amplification of space charge waves in the thin film for four signals with different frequencies is possible. The present formulation can also find application where we need to know the interaction of electromagnetic waves and charge carriers.
Keywords :
III-V semiconductors; Maxwell equations; analogue integrated circuits; carrier mobility; circuit simulation; gallium arsenide; integrated circuit modelling; semiconductor thin films; GaAs; Maxwell equations; analog integrated circuit simulation; carrier motion; microwave range signal processing; millimeter range signal processing; space charge waves; two-valley semiconductor films; Differential equations; Electromagnetic propagation; Electromagnetic scattering; Frequency; Maxwell equations; Semiconductor films; Semiconductor thin films; Signal processing; Space charge; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE-NEWCAS Conference, 2005. The 3rd International
Print_ISBN :
0-7803-8934-4
Type :
conf
DOI :
10.1109/NEWCAS.2005.1496737
Filename :
1496737
Link To Document :
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