• DocumentCode
    1725293
  • Title

    Base recombination in high performance InGaAs/InP HBTs

  • Author

    Seabury, C.W. ; FarIey, C.W. ; McDermott, B.T. ; Higgins, J.A. ; Lin, C.L. ; Kirchner, P.J. ; Woodall, J.M. ; Gee, R.C.

  • Author_Institution
    University of California
  • fYear
    1993
  • fDate
    6/15/1905 12:00:00 AM
  • Firstpage
    89
  • Lastpage
    90
  • Keywords
    Doping; Electron mobility; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Microwave devices; Thermal conductivity; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1993. 51st Annual
  • Type

    conf

  • DOI
    10.1109/DRC.1993.1009594
  • Filename
    1009594
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1725293