DocumentCode :
1725293
Title :
Base recombination in high performance InGaAs/InP HBTs
Author :
Seabury, C.W. ; FarIey, C.W. ; McDermott, B.T. ; Higgins, J.A. ; Lin, C.L. ; Kirchner, P.J. ; Woodall, J.M. ; Gee, R.C.
Author_Institution :
University of California
fYear :
1993
fDate :
6/15/1905 12:00:00 AM
Firstpage :
89
Lastpage :
90
Keywords :
Doping; Electron mobility; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Microwave devices; Thermal conductivity; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1993. 51st Annual
Type :
conf
DOI :
10.1109/DRC.1993.1009594
Filename :
1009594
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1725293
